Journal of Physical Studies 15(3), Article 3701 [4 pages] (2011) DOI: https://doi.org/10.30970/jps.15.3701 EFFECT OF H2 HEAT TREATMENT ON CRYSTALLINITY OF CdTe FILMS GROWN ON GaAs SUBSTRATES Chikara Onodera1, Masaaki Yoshida2 1Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, 215--1 Shimotai Sanbongi, Towada, Aomori 034--0001, Japan, ycd1ngt@yahoo.co.jp 2Department of Electrical and Computer Engineering, Hachinohe National College of Technology, 16--1 Uwanotai, Tamonoki, Hachinohe, Aomori 039--1192, Japan, yoshida-e@hachinohe-ct.ac.jp

We investigated the effect of H$_{2}$ heat treatment on CdTe films grown on GaAs substrates by using photoluminescence (PL) and reflectance spectra. We observed the changes in heavy- and light-hole free exciton (FE) emissions and reflectance spectra with heat-treatment temperature. The energy separation between heavy-hole and light-hole FE lines calculated using the bimetallic strip model is in good agreement (4.08 meV) with that estimated from the peak energies of the heavy- and light-hole FE lines (4.0 meV). By Lorentzian deconvolution of the heavy-hole and light-hole FE lines, their widths decrease with increasing H$_{2}$ heat treatment temperature. By fitting the theoretical reflectance spectra to the measured reflectance spectra, the associated broadenings of light-hole FEs decrease with increasing H$_{2}$ heat treatment temperature. The observations suggested that the crystallinity of CdTe films is improved by H$_{2}$ heat treatment.

PACS number(s): 78.55.Et, 81.05.Dz

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