DOI: https://doi.org/10.30970/jps.02.586
THE MОDEL AND OPTIMISATION OF STRUCTURE OF POWER INTEGRATED PULSE TRANSISTOR
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Journal of Physical Studies 2(4), 586–592 (1998)
DOI: https://doi.org/10.30970/jps.02.586 THE MОDEL AND OPTIMISATION OF STRUCTURE OF POWER INTEGRATED PULSE TRANSISTOR |
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L. M. Smerklo
Lviv Radio Engineering Research Institute, Microelectronics division
7 Naukova Str., Lviv, UA–290060, Ukraine
A model describing the mode of transition to the ohm quasi–saturation in the collector of power integrated bipolar transistors the special features of which is the irregularity of distributed resistance of the collector part, is proposed. The questions of optimisation of topology of power integrated pulse transistors that work in the mode of great relative pulse duration of short pulses with insignificant heat release are considered. The optimisation allows to make a choice of the construction and determine the geometrical dimensions of integrated transistor structure which is characterized by the minimum values of output capacity and resistance of the collector.